This article aims to conduct a comparative study between different types of MOSFETs based on silicon (Si) and IGBTs based on silicon carbide (SiC). Specifically, three MOSFETs (IRF530, IRF630, IRF730) and one IGBT (APT25GF100BN) were analyzed. The study evaluates characteristics such as V DS and V CE voltages, current during transistor turn-on and turn-off, and examines the impact of varying the frequency of the control signal. Transient process data during activation and deactivation were simulated using LTspice software. The analysis focused on their application in a static boost converter to determine conducted emissions in common mode and differential mode. Results indicate that the choice of MOSFET and the switching frequency significantly influence electromagnetic interference (EMI) noise levels.